INVESTIGATION OF THE STATES OF N2 CENTERS IN N-TYPE GAAS SINGLE-CRYSTALS

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作者：
PEL, EG
SOLOVEVA, EV
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1984年 / 18卷 / 06期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：696 / 698
页数：3
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