共 50 条
- [1] PROBLEM OF THE MECHANISM OF BREAKDOWN OF P-N-JUNCTIONS MADE OF GAAS1-XSBX SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (01): : 84 - 87
- [2] REVERSE CURRENT THROUGH P-N-JUNCTIONS IN INHOMOGENEOUS SEMICONDUCTOR SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (09): : 1002 - 1004
- [3] P-N-JUNCTIONS IN GAAS-GASB SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (10): : 1179 - 1182
- [5] NEA PHOTOCATHODES BASED ON GAAS1-XSBX SOLID-SOLUTIONS - THEIR APPLICATION IN PHOTOMULTIPLIERS PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1987, 13 (14): : 833 - 835
- [6] ANALYSIS OF THE REVERSE BRANCHES OF THE CURRENT-VOLTAGE CHARACTERISTICS OF P-N-JUNCTIONS FORMED IN SOLID-SOLUTIONS OF III-V- COMPOUNDS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (03): : 285 - 288
- [7] IMPACT IONIZATION COEFFICIENTS OF ELECTRONS AND HOLES IN GAAS1-XSBX SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (06): : 701 - 702
- [8] INFLUENCE OF AN INHOMOGENEOUS DISTRIBUTION OF IMPURITIES ON PHOTOELECTRIC CHARACTERISTICS OF RESISTOR STRUCTURES BASED ON GAAS1-XSBX SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (05): : 491 - 494
- [9] COMPOSITION AND TEMPERATURE DEPENDENCES OF THE QUANTUM EFFICIENCY OF THE PHOTOLUMINESCENCE EMITTED BY GAAS1-XSBX SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (07): : 780 - 783
- [10] ELECTROLUMINESCENCE OF P-N-JUNCTIONS IN GA0.5IN0.5P SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (01): : 137 - 138