CHARACTERIZATION OF SI-IMPLANTED GALLIUM ANTIMONIDE

Ion implantation is of technological importance in the preparation of doped semiconductors. Raman spectroscopy is a very sensitive and nondestructive tool useful for obtaining information about the state of a material and to distinguish the original crystalline structure and the damaged lattice. In this paper, the variations of the Raman spectra for Si-implanted (100)GaSb with various doses and energies were investigated. In order to heal the damage layer, conventional furnace annealing (FA) as well as rapid thermal annealing (RTA) were used. From these spectra, we found that the quality of the recovered layer will be improved with higher annealing temperatures and longer annealing times. Also, rapid thermal annealing showed better results in comparison with conventional furnace annealing. The best recovery of the damage layer for Si-implanted (1 x 10(15) cm-2, 150 keV) GaSb was at 600-degrees-C for 30 s by rapid thermal annealing.