MONTE-CARLO SIMULATION OF NOISE IN GAAS AT ELECTRIC-FIELDS UP TO THE CRITICAL-FIELD

Monte-Carlo (MC) noise calculations using a method based on the Ramo-Shockley theorem have been carried out for n-type homogeneous GaAs under a variety of conditions. Classical Nyquist noise results have been reproduced for resistors at both 77 and 300 K. The method has also been used to model noise at 300 K at fields up to the critical field, and the results compare favorably with experiments. An alternative method for determining the intervalley coupling constant by using noise temperature data is described, and the results using this method suggest the value XI(GAMMA-L) inverted right perpendicular L almost-equal-to 0.5 x 10(9) eV . cm-1.