ANISOTROPY OF CONDUCTIVITY OF N-TYPE GERMANIUM AT HIGH ELECTRIC FIELDS

被引：22

作者：

DIENYS, V

POZHELA, J

机构：

来源：

PHYSICA STATUS SOLIDI | 1966年 / 17卷 / 02期

关键词：

D O I：

10.1002/pssb.19660170234

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：769 / &

共 50 条

[21] UHF CONDUCTIVITY OF N-TYPE GERMANIUM WITH DISLOCATIONS
OSIPIAN, YA
TALYANSKY, VI
KHARLAMOV, AA
SHEVCHENKO, SA
ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1979, 76 (05): : 1655 - 1660
[22] HEATING OF ELECTRONS IN STRONG CONSTANT ELECTRIC FIELDS AT SURFACE OF N-TYPE GERMANIUM
KALVENAS, SP
BARAVIKA.VV
POZHELA, YK
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (10): : 1249 - +
[23] BULK NEGATIVE DIFFERENTIAL CONDUCTANCE IN N-TYPE GERMANIUM AT LOW ELECTRIC FIELDS
DEBIASI, RS
YEE, SS
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (02): : 256 - &
[24] CONDUCTIVITY ANISOTROPY OF HOT ELECTRONS IN N-TYPE SILICON HEATED BY MICROWAVE FIELDS
HAMAGUCHI, C
INUISHI, Y
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (09) : 1511 - +
[25] ELECTRIC PROPERTIES OF DISLOCATIONS IN N-TYPE GERMANIUM
KRYLOW, J
AULEYTNER, J
PHYSICA STATUS SOLIDI, 1969, 32 (02): : 581 - +
[26] HIGH-ELECTRIC-FIELD CONDUCTIVITY IN N-TYPE SILICON
COSTATO, M
REGGIANI, L
PHYSICAL REVIEW B, 1971, 3 (04): : 1501 - &
[27] INVESTIGATION OF ANISOTROPY OF SURFACE CONDUCTANCE IN N-TYPE GERMANIUM
GORKUN, YI
LITOVCHE.VG
LYSENKO, VS
NOVOMINS.VA
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 20 (01): : 275 - 283
[28] HALL EFFECT OF N-TYPE GAAS IN HIGH ELECTRIC FIELDS
ZYLBERSZTEJN, A
GUNN, JB
PHYSICAL REVIEW, 1967, 157 (03): : 668 - +
[29] N-TYPE SURFACE CONDUCTIVITY ON P-TYPE GERMANIUM
BROWN, WL
PHYSICAL REVIEW, 1953, 91 (03): : 518 - 527
[30] ANISOTROPY OF TRANSVERSE MICROWAVE CONDUCTIVITY OF N-TYPE GE IN A STRONG ELECTRIC-FIELD
BARANOVSKII, SN
PODDYMNIKOV, AN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (02): : 222 - 223

← 1 2 3 4 5 →