ANISOTROPY OF CONDUCTIVITY OF N-TYPE GERMANIUM AT HIGH ELECTRIC FIELDS

被引：22

|

作者：

DIENYS, V

POZHELA, J

机构：

来源：

PHYSICA STATUS SOLIDI | 1966年 / 17卷 / 02期

关键词：

D O I：

10.1002/pssb.19660170234

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：769 / &

相关论文

共 50 条

[1] ANISOTROPY OF CONDUCTIVITY OF N-TYPE GERMANIUM AT HIGH ELECTRIC FIELDS
NATHAN, MI
PHYSICAL REVIEW, 1963, 130 (06): : 2201 - &
[2] ANISOTROPY OF HIGH-FIELD CONDUCTIVITY IN N-TYPE GERMANIUM
HAMMAR, C
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (02): : 417 - &
[3] ANISOTROPY OF CONDUCTIVITY OF N-TYPE GERMANIUM IN STRONG D.C. FIELDS
SCHWEITZER, D
SEEGER, K
ZEITSCHRIFT FUR PHYSIK, 1965, 183 (02): : 207 - +
[4] GALVANOMAGNETIC EFFECTS OF N-TYPE GERMANIUM IN HIGH ELECTRIC FIELDS
KRIECHBA.M
HEINRICH, H
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 303 - &
[5] TRANSVERSE ANISOTROPY OF CONDUCTIVITY OF PARA TYPE GERMANIUM AT HIGH ELECTRIC-FIELDS
VASKEVICIUS, R
REPSAS, K
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1973, 59 (01): : K17 - K18
[6] MICROWAVE CONDUCTIVITY OF N-TYPE GERMANIUM IN PRESENCE OF HIGH ELECTRIC FIELD
KOBAYASHI, T
YOSHIDA, K
KOBAYASHI, H
FUJISAWA, K
JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (07) : 846 - +
[7] INVESTIGATION OF HALL EFFECT IN N-TYPE GERMANIUM AND ITS ANISOTROPY IN STRONG ELECTRIC FIELDS
MOVCHAN, EA
MISELYUK, EG
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (05): : 571 - +
[8] ANISOTROPY OF CONDUCTIVITY IN RANTE OF WARM ELECTRONS FOR HIGH-DOPED N-TYPE GERMANIUM AND N-TYPE SILICON
TSCHULENA, GR
ACTA PHYSICA AUSTRIACA, 1971, 33 (01): : 42 - +
[9] ROOM-TEMPERATURE CONDUCTIVITY ANISOTROPY AND POPULATION REDISTRIBUTION IN N-TYPE SILICON AT HIGH ELECTRIC FIELDS
BASU, PK
NAG, BR
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 627 - &
[10] LONGITUDINAL ANISOTROPY OF HIGH-FIELD CONDUCTIVITY OF N-TYPE GERMANIUM AT ROOM TEMPERATURE
SMITH, JE
PHYSICAL REVIEW, 1969, 178 (03): : 1364 - &

← 1 2 3 4 5 →