FORMATION OF ARSENIC PRECIPITATES IN GAAS BUFFER LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW SUBSTRATE TEMPERATURES

被引：220

作者：

MELLOCH, MR ^{[1
]}

OTSUKA, N ^{[1
]}

WOODALL, JM ^{[1
]}

WARREN, AC ^{[1
]}

FREEOUF, JL ^{[1
]}

机构：

[1] IBM CORP,DIV RES,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 15期

关键词：

D O I：

10.1063/1.103343

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown film structures by molecular beam epitaxy which include GaAs buffer layers grown at low substrate temperatures (250°C). The film structures have been examined using transmission electron microscopy. The layers grown at normal temperatures (600°C) were free of defects or clusters. In contrast, the layer which was grown at low substrate temperatures contained precipitates which have been identified as hexagonal arsenic. The density of the arsenic precipitates is found to be very sensitive to the substrate temperature during growth.

引用

页码：1531 / 1533

页数：3

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