TEMPERATURE-INDUCED CHARGE-TRANSFER AT A POLYMER-SEMICONDUCTOR INTERFACE - STRONG-INVERSION EFFECTS

A copolymer of vinylidene fluoride and trifluoroethylene is solution cast onto a p-type silicon wafer to produce an enhancement field-effect transistor structure. Inversion is induced at the silicon surface when the aluminized polymer gate is suitably biased. The thermal response of the structure is investigated for a pressure-step-induced temperature pulse causing a corresponding pulse in the drain-to-source current. Under-strong inversion conditions, excellent agreement between theory and results is obtained if two given species of trap are used: one with the surface density and ionization energy fixed, and the other with both these parameters variable.