PROPERTIES OF ULTRATHIN FILMS OF POROUS SILICON

被引：12

作者：

VONBEHREN, J

UCER, KB

TSYBESKOV, L

VANDYSHEV, JV

FAUCHET, PM

机构：

[1] TECH UNIV MUNICH,W-8046 GARCHING,GERMANY

[2] LASER ENERGET LAB,ROCHESTER,NY

[3] MOSCOW MV LOMONOSOV STATE UNIV,MOSCOW,RUSSIA

[4] INST OPT,ROCHESTER,NY

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 03期

关键词：

D O I：

10.1116/1.588241

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have produced films of light emitting porous silicon (LEPSi) thinner than 1 μm, lifted them off the silicon wafer by an electropolishing step, and deposited them onto sapphire windows where they remain attached by van der Waals or electrostatic forces. Although free-standing LEPSi films had been obtained before, our films are one order of magnitude thinner, luminesce strongly, and have excellent mechanical properties because of the sapphire substrate. The important steps in this procedure are discussed, and the structural, chemical, and optical properties of these films as measured using a variety of probes are reported. These films are semitransparent in the visible and thus make several new optical measurements possible. In particular, the results of photoinduced absorption measurements performed with 100 fs time resolution are presented.

引用

页码：1225 / 1229

页数：5

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