THEORY OF ELECTRON DIFFUSION UNDER A TEMPERATURE-GRADIENT IN DEGENERATE SEMICONDUCTORS HAVING NON-PARABOLIC ENERGY-BANDS

被引：0

作者：

CHAKRAVARTI, AN ^{[1
]}

机构：

[1] UNIV COLL SCI & TECHNOL CALCUTTA,INST RADIO PHYS & ELECTR,92 ACHARYA PRAFULLACHANDRA RD,CALCUTTA 9,INDIA

来源：

CZECHOSLOVAK JOURNAL OF PHYSICS | 1975年 / B 25卷 / 07期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：778 / 784

页数：7

共 24 条

[11] On the electron energy spectrum in heavily doped non-parabolic semiconductors
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Nag, B
Ghatak, KP
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2003, 64 (11) : 2191 - 2197
[12] ON THE GENERALIZED EINSTEIN RELATION FOR NON-PARABOLIC DEGENERATE SEMICONDUCTORS UNDER MAGNETIC QUANTIZATION
SARKAR, CK
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1980, 102 (01): : K33 - K36
[13] GALVANOMAGNETIC AND THERMOMAGNETIC EFFECTS IN SEMICONDUCTORS WITH NON-SPHERICAL AND NON-PARABOLIC ENERGY BANDS
KOLODZIEJCZAK, J
ZUKOTYNSKI, S
PHYSICA STATUS SOLIDI, 1964, 5 (01): : 145 - 158
[14] HOT-ELECTRON KERR EFFECT IN SEMICONDUCTORS WITH NON-PARABOLIC DISPERSION LAW OF ENERGY
ALMASOV, LA
DYKMAN, IM
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1972, 51 (02): : 751 - &
[15] Unified carrier density approximation for non-parabolic and highly degenerate HgCdTe semiconductors covering SWIR, MWIR and LWIR bands
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INFRARED PHYSICS & TECHNOLOGY, 2008, 51 (03) : 259 - 262
[16] CALCULATION OF THE INTRINSIC CARRIER CONCENTRATION AND THE MINORITY-CARRIER CONCENTRATION OF SILICON FOR HEAVY PHOSPHORUS DOPING WITH NON-PARABOLIC ENERGY-BANDS AT LOW-TEMPERATURE
XIAO, ZX
WEI, TL
SOLID-STATE ELECTRONICS, 1995, 38 (10) : 1837 - 1838
[17] ON THE EFFECTIVE ELECTRON MASS IN STRAINED LAYER SUPERLATTICES OF NON-PARABOLIC SEMICONDUCTORS UNDER STRONG MAGNETIC QUANTIZATION
GHATAK, KP
MITRA, B
INTERNATIONAL JOURNAL OF ELECTRONICS, 1992, 72 (04) : 541 - 552
[18] ON THE EFFECTIVE ELECTRON MASS IN QUANTUM WIRES OF NON-PARABOLIC SEMICONDUCTORS UNDER A PARALLEL MAGNETIC-FIELD
BHATTACHARYYA, D
GHATAK, KP
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1995, 187 (02): : 523 - 531
[19] ENERGY DIFFUSION EQUATION FOR AN ELECTRON-GAS INTERACTING WITH POLAR OPTICAL PHONONS - NON-PARABOLIC CASE
LEBURTON, JP
TANG, J
HESS, K
SOLID STATE COMMUNICATIONS, 1983, 45 (06) : 517 - 519
[20] Modification of the Einstein equations of majority- and minority-carriers with band gap narrowing effect in n-type degenerate silicon with degenerate approximation and with non-parabolic energy bands
Xiao, ZX
Wei, TL
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (05) : 913 - 914

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