The effect of surfactants on epitaxial growth of gallium nitride from gas phase in the Ga-HCl-NH3-H2-Ar system

被引：0
|
作者：
Yu. V. Zhilyaev
V. V. Zelenin
T. A. Orlova
V. N. Panteleev
N. K. Poletaev
S. N. Rodin
S. A. Snytkina
机构：
[1] Russian Academy of Sciences,Ioffe Physical Technical Institute
来源：
Technical Physics Letters | 2015年 / 41卷
关键词：
Surfactant; Technical Physic Letter; Vapor Phase Epitaxy; Gallium Nitride; Transverse Cleavage;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We have studied epitaxial layers of gallium nitride (GaN) in a template composition grown by surfactant-mediated hydride-chloride vapor phase epitaxy. The surfactant component was provided by 5 mass % additives of antimony and indium to the source of gallium. Comparative analysis of the obtained results shows evidence of the positive influence of surfactants on the morphology of epitaxial GaN layers.
引用
收藏
页码：476 / 478
页数：2
相关论文
共 50 条
  • [21] Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3
    Imade, Mamoru
    Bu, Yuan
    Sumi, Tomoaki
    Kitamoto, Akira
    Yoshimura, Masashi
    Sasaki, Takatomo
    Imsemura, Masashi
    Mori, Yusuke
    JOURNAL OF CRYSTAL GROWTH, 2012, 350 (01) : 56 - 59
  • [22] Growth of α-Ga2O3 from Gallium Acetylacetonate under HCl Support by Mist Chemical Vapor Deposition
    Yasuoka, Tatsuya
    Liu, Li
    Dang, Giang T.
    Kawaharamura, Toshiyuki
    NANOMATERIALS, 2024, 14 (14)
  • [23] EPITAXIAL NUCLEATION AND GROWTH-KINETICS OF INDIUM-PHOSPHIDE IN AN IN-PH3-HCL-H2 SYSTEM
    MANI, VN
    DHANASEKARAN, R
    RAMASAMY, P
    THIN SOLID FILMS, 1988, 163 : 437 - 441
  • [24] MECHANISM OF EPITAXIAL-GROWTH OF GAAS IN SYSTEM GA(CH3)3-ASH3-H2
    FROLOV, IA
    BOLDYREVSKII, PB
    DRUZ, BL
    SOKOLOV, EB
    INORGANIC MATERIALS, 1977, 13 (05) : 632 - 634
  • [25] EFFECT OF H2O AND NH3 CONTAMINANTS ON EPITAXIAL GROWTH OF SILVER ON SODIUM CHLORIDE
    MISSIROLI, GF
    ZIGNANI, F
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-BASIC TOPICS IN PHYSICS, 1970, 70 (02): : 221 - +
  • [26] Modeling of Epitaxial Silicon Growth From the DCS-H2-HCl System in a Large Scale CVD Reactor
    Ramadan, Zaher
    Abdelmotalib, Hamada Mohamed
    Im, Ik-Tae
    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2018, 31 (03) : 363 - 370
  • [27] Effect of H-2 concentration on rf plasma-enhanced chemical vapour deposition of boron nitride coatings from the BCl3-N-2-H-2-Ar gas system
    Schaffnit, C
    DelPuppo, H
    Hugon, R
    Thomas, L
    Moretto, P
    Rossi, F
    Pauleau, Y
    SURFACE & COATINGS TECHNOLOGY, 1996, 80 (1-2): : 13 - 17
  • [28] Microstructural and microtextural investigations of boron nitride deposited from BCl3-NH3-H2 gas mixtures
    Le Gallet, S
    Chollon, G
    Rebillat, F
    Guette, A
    Bourrat, X
    Naslain, R
    Couzi, M
    Bruneel, JL
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2004, 24 (01) : 33 - 44
  • [29] COMPOSITIONAL ASPECTS OF THE VAPOR-PHASE EPITAXIAL-GROWTH OF GAINAS LAYERS FROM GA-IN-AS-H-CL SYSTEM
    MANI, VN
    BULLETIN OF MATERIALS SCIENCE, 1994, 17 (05) : 469 - 478
  • [30] VAPOR-PHASE GROWTH OF INP USING THE PH3-HCL-IN-H2 (HYDRIDE) SYSTEM
    ZINKIEWICZ, LM
    LEPKOWSKI, TR
    STILLMAN, GE
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C372 - C372
12345