The effect of surfactants on epitaxial growth of gallium nitride from gas phase in the Ga-HCl-NH3-H2-Ar system

被引：0
|
作者：
Yu. V. Zhilyaev
V. V. Zelenin
T. A. Orlova
V. N. Panteleev
N. K. Poletaev
S. N. Rodin
S. A. Snytkina
机构：
[1] Russian Academy of Sciences,Ioffe Physical Technical Institute
来源：
Technical Physics Letters | 2015年 / 41卷
关键词：
Surfactant; Technical Physic Letter; Vapor Phase Epitaxy; Gallium Nitride; Transverse Cleavage;
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学科分类号：
摘要：
We have studied epitaxial layers of gallium nitride (GaN) in a template composition grown by surfactant-mediated hydride-chloride vapor phase epitaxy. The surfactant component was provided by 5 mass % additives of antimony and indium to the source of gallium. Comparative analysis of the obtained results shows evidence of the positive influence of surfactants on the morphology of epitaxial GaN layers.
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页码：476 / 478
页数：2
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