Magnetoluminescence of Ge/Ge1−xSix heterostructures

被引：0
|
作者：
A. V. Chernenko
N. G. Kalugin
O. A. Kusnetsov
机构：
[1] Russian Academy of Sciences,Institute of Solid State Physics
[2] Russian Academy of Sciences,Institute of Microstructure Physics
来源：
Journal of Experimental and Theoretical Physics | 1998年 / 87卷
关键词：
Spectroscopy; Experimental Data; Magnetic Field; State Physics; Field Theory;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
This paper reports on the first investigation made of luminescence of Ge/Ge1−xSix heterostructures at liquid-helium temperatures in a magnetic field of up to 14 T. The luminescence lines observed in the spectra are due to both free and impurity bound excitons in Ge layers. The diamagnetic shift of the quasi-two-dimensional exciton has been measured. From the experimental data the size of the exciton has been estimated to be 75–90 Å.
引用
收藏
页码：337 / 341
页数：4
相关论文
共 50 条
  • [31] Growth dynamics of Ge1−xSix single crystals obtained by directional constitutional supercooling of the melt
    G. Kh. Azhdarov
    Z. M. Zeynalov
    Z. A. Agamaliyev
    S. O. Mamedova
    Crystallography Reports, 2011, 56 : 531 - 534
  • [32] ELECTRON PROPERTIES OF HETEROSTRUCTURES GE-GE1-XSIX WITH 2D CHARGE-CARRIERS
    ORLOV, LK
    IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 1994, 58 (07): : 118 - 124
  • [33] Quantum Hall effect in p-Ge/Ge1-xSix heterostructures with low hole mobility
    Arapov, Yu. G.
    Harus, G. I.
    Karskanov, I. V.
    Neverov, V. N.
    Shelushinina, N. G.
    Yakunin, M. V.
    Kuznetsov, O. A.
    Ponomarenko, L.
    de Visser, A.
    LOW TEMPERATURE PHYSICS, 2007, 33 (2-3) : 147 - 150
  • [34] OBSERVATION OF 2D-EXCITON LUMINESCENCE IN GERMANIUM LAYERS IN PERIODIC GE-GE1-XSIX HETEROSTRUCTURES
    KALUGIN, NG
    ORLOV, LK
    KUZNETSOV, OA
    JETP LETTERS, 1993, 58 (03) : 200 - 205
  • [35] The quantum Hall effect in a wide p-Ge1−xSix/Ge/p-Ge1−xSix potential well
    Yu. G. Arapov
    V. N. Neverov
    G. I. Kharus
    N. G. Shelushinina
    M. V. Yakunin
    O. A. Kuznetsov
    Semiconductors, 1998, 32 : 649 - 656
  • [36] The quantum Hall effect in a wide p-Ge1-xSix/Ge/p-Ge1-xSix potential well
    Arapov, YG
    Neverov, VN
    Kharus, GI
    Shelushinina, NG
    Yakunin, MV
    Kuznetsov, OA
    SEMICONDUCTORS, 1998, 32 (06) : 649 - 656
  • [37] Localized and resonant states of shallow acceptors in Ge/Ge1-xSix multiple-quantum well heterostructures
    Aleshkin, VY
    Andreev, BA
    Gavrilenko, VI
    Erofeeva, IV
    Kozlov, DV
    Kuznetsov, OA
    COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 413 - 418
  • [38] Scaling in the regime of the quantum Hall effect and hole localization in p-Ge/Ge1-xSix heterostructures
    Arapov, YG
    Gorodilov, NA
    Neverov, VN
    Kharus, GI
    Shelushinina, NG
    SEMICONDUCTORS, 1997, 31 (03) : 222 - 227
  • [39] Formation and characterization of locally strained Ge1 - xSnx/Ge microstructures
    Ike, Shinichi
    Moriyama, Yoshihiko
    Kurosawa, Masashi
    Taoka, Noriyuki
    Nakatsuka, Osamu
    Imai, Yasuhiko
    Kimura, Shigeru
    Tezuka, Tsutomu
    Zaima, Shigeaki
    THIN SOLID FILMS, 2014, 557 : 164 - 168
  • [40] Electrophysical studies of 2D-hole spectral characteristics and peculiarities of scattering mechanisms in Ge layers of Ge-Ge1-xSix heterostructures
    Arapov, Y
    Yakunin, M
    Orlov, L
    Rubtsova, R
    Vorobyov, L
    Donetsky, D
    SEMICONDUCTING AND INSULATING MATERIALS, 1996: PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96), 1996, : 245 - 248
12345