Low-temperature crystallization of thin nickel films under the action of atomic hydrogen

被引：0
|
作者：
E. L. Zhavzharov
G. A. Byalik
V. M. Matyushin
机构：
[1] Zaporozhye National Technical University,
来源：
Technical Physics Letters | 2007年 / 33卷
关键词：
81.15.-z;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The influence of atomic hydrogen on the electrical properties and structure of thin nickel films obtained by thermal deposition in vacuum on dielectric substrates has been studied. The subsequent treatment of deposited films at 300–310 K in atomic hydrogen at a pressure of ∼20 Pa and a density of ∼1019 m−3 leads to the modification of their structure and electrical properties. A mechanism explaining the observed effect of atomic hydrogen on thin metal films is proposed.
引用
收藏
页码：571 / 574
页数：3
相关论文
共 50 条
  • [41] CRYSTALLIZATION OF LPCVD SILICON FILMS BY LOW-TEMPERATURE ANNEALING
    AOYAMA, T
    KAWACHI, G
    KONISHI, N
    SUZUKI, T
    OKAJIMA, Y
    MIYATA, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (04) : 1169 - 1173
  • [42] Atomization of indium films under the action of atomic hydrogen
    Matyushin, VM
    Matyushin, MV
    Savin, VV
    RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY, 2001, 75 (07): : 1182 - 1184
  • [43] LOW-TEMPERATURE DISINTEGRATION OF THIN SOLID FILMS
    MAZUR, VA
    GOLDINER, MG
    PHYSICS LETTERS A, 1989, 137 (1-2) : 69 - 74
  • [44] LOW-TEMPERATURE PROPERTIES OF THIN-FILMS
    TOSIC, BS
    SETRAJCIC, JP
    MIRJANIC, DL
    BUNDALO, ZV
    PHYSICA A-STATISTICAL MECHANICS AND ITS APPLICATIONS, 1992, 184 (3-4) : 354 - 366
  • [45] Low-temperature germanium thin films on silicon
    Sorianello, Vito
    Colace, Lorenzo
    Armani, Nicola
    Rossi, Francesca
    Ferrari, Claudio
    Lazzarini, Laura
    Assanto, Gaetano
    OPTICAL MATERIALS EXPRESS, 2011, 1 (05): : 856 - 865
  • [46] RECOMBINATION OF ATOMIC-HYDROGEN ON LOW-TEMPERATURE SURFACES
    SCHUTTE, A
    BASSI, D
    TOMMASINI, F
    TURELLI, A
    SCOLES, G
    HERMANS, LJF
    JOURNAL OF CHEMICAL PHYSICS, 1976, 64 (10): : 4135 - 4142
  • [47] LOW-TEMPERATURE CRYSTALLIZATION OF AMORPHOUS-SILICON FILMS FOR THE FABRICATION OF THIN-FILM TRANSISTORS
    PANWAR, OS
    MOORE, RA
    MITCHELL, NSJ
    GAMBLE, HS
    ARMSTRONG, BM
    APPLIED SURFACE SCIENCE, 1989, 36 (1-4) : 247 - 256
  • [48] Low-temperature crystallization of lead zirconate titanate thin films using 2.45 GHz microwaves
    Chang, T. H.
    Bhaskar, Ankam
    Chang, H. Y.
    Cheng, S. Y.
    PIERS 2007 BEIJING: PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM, PTS I AND II, PROCEEDINGS, 2007, : 458 - +
  • [49] Low-temperature crystallization and electrical properties of BST thin films using excimer laser annealing
    Kang, Min Gyu
    Cho, Kwang Hwan
    Oh, Seung Min
    Do, Young Ho
    Kang, Chong Yun
    Kim, Sangsig
    Yoon, Seok Jin
    CURRENT APPLIED PHYSICS, 2011, 11 (03) : S66 - S69
  • [50] Low-temperature crystallization of amorphous silicon using atomic hydrogen generated by catalytic reaction on heated tungsten
    Heya, A
    Masuda, A
    Matsumura, H
    APPLIED PHYSICS LETTERS, 1999, 74 (15) : 2143 - 2145
12345