Low-temperature crystallization of thin nickel films under the action of atomic hydrogen

被引：0
|
作者：
E. L. Zhavzharov
G. A. Byalik
V. M. Matyushin
机构：
[1] Zaporozhye National Technical University,
来源：
Technical Physics Letters | 2007年 / 33卷
关键词：
81.15.-z;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The influence of atomic hydrogen on the electrical properties and structure of thin nickel films obtained by thermal deposition in vacuum on dielectric substrates has been studied. The subsequent treatment of deposited films at 300–310 K in atomic hydrogen at a pressure of ∼20 Pa and a density of ∼1019 m−3 leads to the modification of their structure and electrical properties. A mechanism explaining the observed effect of atomic hydrogen on thin metal films is proposed.
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页码：571 / 574
页数：3
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