Novel electrical characterization for advanced CMOS gate dielectrics

被引：0
|
作者：
T. P. Ma
机构：
[1] Yale University,Department of Electrical Engineering
来源：
Science in China Series F: Information Sciences | 2008年 / 51卷
关键词：
MOS device; gate dielectrics; electrical characterization; IETS; PASHEI;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
This paper reviews the following electrical characterization techniques for measuring the microscopic bonding structures, impurities, and electrically active defects in advanced CMOS gate stacks: 1) inelastic electron tunneling spectroscopy (IETS), 2) lateral profiling of threshold voltages, interface-trap density, and oxide charge density distributions along the channel of an MOSFET, and 3) pulse agitated substrate hot electron injection (PASHEI) technique for measuring trapping effects in the gate dielectric at low and modest gate voltages.
引用
收藏
页码：774 / 779
页数：5
相关论文
共 50 条
  • [1] Novel electrical characterization for advanced CMOS gate dielectrics
    T. P. MA
    ScienceinChina(SeriesF:InformationSciences), 2008, (06) : 774 - 779
  • [2] Novel electrical characterization for advanced CMOS gate dielectrics
    Ma, T. P.
    SCIENCE IN CHINA SERIES F-INFORMATION SCIENCES, 2008, 51 (06): : 774 - 779
  • [3] Scaling of gate dielectrics for advanced CMOS applications
    Ma, TP
    PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE - 4, 2000, 2000 (02): : 19 - 32
  • [4] Electrical and interfacial characterization of atomic layer deposited high-κ gate dielectrics on GaAs for advanced CMOS devices
    Dalapati, Goutam Kumar
    Tong, Yi
    Loh, Wei-Yip
    Mun, Hoe Keat
    Cho, Byung Jin
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (08) : 1831 - 1837
  • [5] Characterization of plasma damage in plasma nitrided gate dielectrics for advanced CMOS dual gate oxide process
    Chen, CC
    Yu, MC
    Cheng, JY
    Wang, MF
    Lee, TL
    Chen, SC
    Yu, CH
    Liang, MS
    Chen, CH
    Yang, CW
    Fang, YK
    2002 7TH INTERNATIONAL SYMPOSIUM ON PLASMA- AND PROCESS-INDUCED DAMAGE, 2002, : 41 - 44
  • [6] Evaluation of ZrO2 gate dielectrics for advanced CMOS devices
    Gehring, A
    Harasek, S
    Bertagnolli, E
    Selberherr, S
    ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2003, : 473 - 476
  • [7] Reliability and integration of ultra-thin gate dielectrics for advanced CMOS
    Buchanan, DA
    Lo, SH
    MICROELECTRONIC ENGINEERING, 1997, 36 (1-4) : 13 - 20
  • [8] Electrical characterization of high-k gate dielectrics
    Ma, TP
    2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 361 - 365
  • [9] Challenges in Atomic-Scale Characterization of High-k Dielectrics and Metal Gate Electrodes for Advanced CMOS Gate Stacks
    Zhu, Xinhua
    Zhu, Jian-min
    Li, Aidong
    Liu, Zhiguo
    Ming, Naiben
    JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2009, 25 (03) : 289 - 313
  • [10] Challenges in Atomic-Scale Characterization of High-k Dielectrics and Metal Gate Electrodes for Advanced CMOS Gate Stacks
    Xinhua Zhu
    JournalofMaterialsScience&Technology, 2009, 25 (03) : 289 - 313
12345