On the Spatial Localization of Free Electrons in 4H-SiC MOSFETS with an n Channel

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作者：
P. A. Ivanov
机构：
[1] Ioffe Institute,
来源：
Semiconductors | 2018年 / 52卷
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摘要：
The problem of the spatial localization of free electrons in 4H-SiC metal—oxide—semiconductor field effect transistors (MOSFETS) with an accumulation- and inversion-type n channel is theoretically analyzed. The analysis demonstrates that, in optimally designed accumulation transistors (ACCUFETs), the average distance from the surface, at which free electrons are localized, may be an order of magnitude larger than that in inversion MOSFETs. This can make 4H-SiC ACCUFETs advantageous as regards the effective carrier mobility in a conducting channel.
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页码：100 / 104
页数：4
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