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Oxygen and RNA in stress-induced mutation
被引:0
|作者:
Raul Correa
Philip C. Thornton
Susan M. Rosenberg
P. J. Hastings
机构:
[1] Baylor College of Medicine,Department of Molecular and Human Genetics
[2] Baylor College of Medicine,Dan L. Duncan Comprehensive Cancer Center
[3] Baylor College of Medicine,Department of Biochemistry and Molecular Biology
[4] Baylor College of Medicine,Department of Molecular Virology and Microbiology
来源:
关键词:
Mutagenic break repair;
Mutation;
R-loop;
Break-induced replication;
Stress-response;
Reactive oxygen species;
D O I:
暂无
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学科分类号:
摘要:
Mechanisms of mutation upregulated by stress responses have been described in several organisms from bacteria to human. These mechanisms might accelerate genetic change specifically when cells are maladapted to their environment. Stress-induced mutation mechanisms differ in their genetic requirements from mutation in growing cells, occurring by different mechanisms in different assay systems, but having in common a requirement for the induction of stress-responses. Here, we review progress in two areas relevant to stress-response-dependent mutagenic DNA break repair mechanisms in Escherichia coli. First, we review evidence that relates mutation to transcription. This connection might allow mutagenesis in transcribed regions, including those relevant to any stress being experienced, opening the possibility that mutations could be targeted to regions where mutation might be advantageous under conditions of a specific stress. We review the mechanisms by which replication initiated by transcription can lead to mutation. Second, we review recent findings that, although stress-induced mutation does not require exogenous DNA-damaging agents, it does require the presence of damaged bases in DNA. For starved E. coli, endogenous oxygen radicals cause these altered bases. We postulate that damaged bases stall the replisome, which, we suggest, is required for DNA-polymerase exchange, allowing the action of low-fidelity DNA polymerases that promote mutation.
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页码:769 / 776
页数:7
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