Microwave Dielectric Properties of Nd(Zn1/2Ti1/2)O3 Ceramics with V2O5 Additives

被引：1
|
作者：
Cheng-Hsing Hsu
Chia-Hao Chang
机构：
[1] National United University,Department of Electrical Engineering
来源：
Journal of Materials Engineering and Performance | 2013年 / 22卷
关键词：
microwave dielectric properties; Nd(Zn; Ti; )O; ceramics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The microwave dielectric properties and the microstructures of V2O5-doped Nd(Zn1/2Ti1/2)O3 ceramics prepared by conventional solid-state route have been studied. Doping with V2O5 (up to 6 wt.%) can effectively promote the densification of Nd(Zn1/2Ti1/2)O3 ceramics with low sintering temperature. At 1300 °C, Nd(Zn1/2Ti1/2)O3 ceramic when added with 6 wt.% V2O5 possesses a dielectric constant of 29.9, a quality factor (Q × f) value of 105000 GHz (at 8 GHz), and a temperature coefficient of resonant frequency of −45 ppm/°C. These V2O5-doped Nd(Zn1/2Ti1/2)O3 ceramics can be used in microwave devices.
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页码：312 / 315
页数：3
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