Spin-filtering effect in GaAsN: electron-nuclear spin dynamics of Ga3+ centers

被引：0
|
作者：
V. G. Ibarra-Sierra
J. C. Sandoval-Santana
S. Azaizia
H. Carrère
L. A. Bakaleinikov
V. K. Kalevich
E. L. Ivchenko
X. Marie
T. Amand
A. Balocchi
A. Kunold
机构：
[1] Universidad Autónoma Metropolitana,Departamento de Física
[2] Universitè de Toulouse,Área de Física Teórica y Materia Condensada
[3] INSA-CNRS-UPS,undefined
[4] LPCNO,undefined
[5] Ioffe Physical-Technical Institute,undefined
[6] Universidad Autónoma Metropolitana Azcapotzalco,undefined
来源：
Journal of Materials Science: Materials in Electronics | 2018年 / 29卷
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摘要：
The impact of Ga3+ centers in the spin-filtering effect observed in GaAsN samples is investigated through a model based on the master equation approach. Our results, compared with experimental data, show that, Ga3+ are essential to understanding the behavior of the photoluminescence intensity and degree of circular polarization as functions of a Faraday configuration magnetic field. The model presented here takes into account the interplay of Ga2+ and Ga3+ centers, Zeeman and hyperfine interaction. The various processes that drive the spin-filtering effect, as the spin selective capture of conduction band electrons into Ga centers are also considered here.
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页码：15307 / 15314
页数：7
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