X-Ray Diffraction Analysis of Epitaxial Layers with the Properties of a Dislocation Filter

被引：0
|
作者：
I. D. Loshkarev
A. P. Vasilenko
E. M. Trukhanov
A. V. Kolesnikov
M. O. Petrushkov
M. A. Putyato
机构：
[1] Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian Branch
来源：
Technical Physics Letters | 2018年 / 44卷
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摘要：
An approach to instant testing of epitaxial films with a sharp decrease in the threading dislocation density is proposed. High-resolution X-ray diffractometry, including reciprocal space mapping, has been used. The structure of GaAs/Si(001) heterosystems with low-temperature GaAs layers has been analyzed. A decrease in the density of threading dislocations in the GaAs film with the formation of a small-angle boundary has been detected.
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页码：562 / 565
页数：3
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