Ultra low-voltage floating-gate (FGUVMOS) amplifiers

被引：3
|
作者：
Berg Y. [1 ]
Næss Ø. [1 ]
Høvin M.E. [1 ,2 ]
Gundersen H. [1 ]
机构：
[1] Department of Informatics, University of Oslo, Blindern, N-0316 Oslo
[2] NKI Ingeniør Høyskole, Oslo
来源：
Analog Integrated Circuits and Signal Processing | 2001年 / 26卷 / 26期
关键词：
CMOS integrated circuits - Gates (transistor) - MOSFET devices - Threshold voltage - Ultraviolet radiation;
D O I：
10.1023/A:1008322202292
中图分类号：
学科分类号：
摘要：
This paper presents an approach to programming threshold voltages in floating-gate CMOS circuits. The threshold voltage programming is exploited in ultra low-voltage (ULV) amplifier design. A threshold voltage programming scheme is presented and several examples of analog ULV circuits are described. The ULV circuits are used in ULV amplifier design. Measured data are provided.
引用
收藏
页码：63 / 73
页数：10
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