Studies of ZrO2 electrolyte thin-film thickness on the all-solid thin-film electrochromic devices

被引：0

作者：

K. J. Patel

M. S. Desai

C. J. Panchal

机构：

[1] BITS Education campus,Science and Humanities Department

[2] The M.S. University of Baroda,Applied Physics Department, Faculty of Technology and Engineering

来源：

Journal of Solid State Electrochemistry | 2015年 / 19卷

关键词：

Electrochromic devices; All-solid thin film; Transmittance modulation; Solid electrolyte; Zirconium oxide; Open-circuit memory; Physical vapor depositions;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The electrochromic behavior of an all-solid thin-film electrochromic device consisting of layers ITO/NiO/ZrO2/WO3/ITO using the physical vapor deposition method has been studied as a function of the thickness of ZrO2 electrolyte. The ZrO2 thin-film thickness is varied from 2,000–5,000 Å. The transmittance modulation and memory effect improved with increase in the thickness of ZrO2 electrolyte. The device having 5,000 Å ZrO2 thickness shows good transmittance modulation (56 %) in the wavelength range of 450–1,000 nm with open-circuit memory effect of 170 min.

引用

页码：275 / 279

页数：4

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