Effect of Co doping on the structure, optical and magnetic properties of LaAlO3 thin films

被引：0
|
作者：
Gang Wu
Hongmei Deng
Weijun Wang
Kezhi Zhang
Huiyi Cao
Pingxiong Yang
Junhao Chu
机构：
[1] East China Normal University,Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronics
[2] Shanghai University,Laboratory for Microstructures
来源：
Journal of Materials Science: Materials in Electronics | 2014年 / 25卷
关键词：
Perovskite; Quartz Substrate; LaAlO3; Dope Transition Metal; Cobalt Nitrate Hexahydrate;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
LaAl1−xCoxO3 (x = 0, 0.05 and 0.10) thin films were fabricated on quartz substrates by sol–gel method. X-ray diffraction data indicate that all thin films belong to perovskite LaAlO3, and there is no secondary phase. Two obvious Raman peaks are observed in the Raman spectra, and the 113 cm−1 peak is assigned to A1 mode of perovskite LaAlO3 while the 696 cm−1 peak is caused by the Co–O stretching vibration. The band gap of the films decreases from 5.66 to 5.40 eV with the Co composition increasing from 0 to 10 %. The magnetization of the films was investigated, and it enhances significantly with increase of the Co content.
引用
收藏
页码：3137 / 3140
页数：3
相关论文
共 50 条
  • [31] Atomic structure of Ba0.5Sr0.5TiO3 thin films on LaAlO3
    Gao, HJ
    Chen, CL
    Rafferty, B
    Pennycook, SJ
    Luo, GP
    Chu, CW
    APPLIED PHYSICS LETTERS, 1999, 75 (17) : 2542 - 2544
  • [32] The Effect of Co and Cu Co-Doping Zno Thin Films on Structural and Optical Properties
    Saoud, Tayeb
    Benramache, Said
    Diha, Abdallah
    CHEMISTRY-DIDACTICS-ECOLOGY-METROLOGY, 2023, 28 (1-2) : 171 - 178
  • [33] Structural and electrical properties of the interfacial layer in sputter deposited LaAlO3/Si thin films
    Edon, V.
    Hugon, M. C.
    Agius, B.
    Cohen, C.
    Cardinaud, Ch.
    Eypert, C.
    THIN SOLID FILMS, 2007, 515 (20-21) : 7782 - 7789
  • [34] Effect of stress on the structure and ferroelectric properties of LaAlO3/BaTiO3 superlattices
    Li, Yan
    Hao, Lan-Zhong
    Deng, Hong
    Zhang, Ying
    Ji, Hong
    Dianzi Keji Daxue Xuebao/Journal of the University of Electronic Science and Technology of China, 2005, 34 (03): : 399 - 402
  • [35] Structure, morphology and I–V characteristics of thermally evaporated LaAlO3 nanostructured thin films
    S. Sugumaran
    T. A. Divya
    R. K. Sivaraman
    C. S. Bellan
    K. C. Sekhar
    M. F. Jamlos
    Journal of Materials Science: Materials in Electronics, 2022, 33 : 9085 - 9100
  • [36] Effect of divalent dopants on crystal structure and electrical properties of LaAlO3 perovskite
    Chen, Te-Yuan
    Pan, Ruo-Ying
    Fung, Kuan-Zong
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2008, 69 (2-3) : 540 - 546
  • [37] Structural properties of SrO thin films grown by molecular beam epitaxy on LaAlO3 substrates
    Maksimov, O.
    Heydemann, V. D.
    Fisher, P.
    Skowronski, M.
    Salvador, P. A.
    APPLIED PHYSICS LETTERS, 2006, 89 (26)
  • [38] Growth and Transport properties of Sr-doped Lanthanum Titanate Thin Films on LaAlO3
    Sung, Huang-Huei
    Tsai, Jiun-Tzuen
    Lin, Cheng-Hsueh
    Chen, Shing-Yu
    Fan, Jung-Chuan
    Lin, Chun-Rong
    ADVANCED MATERIALS AND NANOTECHNOLOGY, 2012, 700 : 41 - +
  • [39] Epitaxial Tl-2201 thin films on single crystal LaAlO3:: Preparation and properties
    Chen, HQ
    Johansson, LG
    Ivanov, ZG
    Erts, D
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1999, 172 (01): : 165 - 175
  • [40] LaALO3 films prepared by MBE on LaAlO3(001) and Si(001) substrates
    Gaillard, S
    Rozier, Y
    Merckling, C
    Ducroquet, F
    Gendry, M
    Hollinger, G
    MICROELECTRONIC ENGINEERING, 2005, 80 : 146 - 149
12345