Extreme ultraviolet nanolithography for ULSI: A review

被引：0
|
作者：
R. P. Seisyan
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Technical Physics | 2005年 / 50卷
关键词：
Basic Concept; Extreme Ultraviolet; Integration Level;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The basic concepts of high-resolution extreme ultraviolet nanolithography, which is aimed at producing ultra-large-scale integrated circuits (with an integration one or two orders of magnitude exceeding present-day integration levels), are reviewed and substantiated. The problems in and the current status of this field of technology are considered.
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页码：535 / 545
页数：10
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