High linearity 24 dB gain wideband inductorless balun low-noise amplifier for IEEE 802.22 band

A 50 MHz–1 GHz low-noise amplifier circuit with high linearity for IEEE 802.22 wireless regional area network is presented. It was implemented without any inductor and offers a differential output for balun use. Noise canceling and linearity boosting techniques were combined to improve the amplifier performance in such a way that they can be separately optimized. Linearity was improved using diode-connected transistors. The amplifier was implemented in a 130 nm CMOS process in a compact 136 μm × 71 μm area. Simulations are presented for post-layout schematics for two classes of design: one for best linearity, another for best noise figure (NF). When optimized for best linearity, simulation results achieve a voltage gain >23.7 dB (power gain >19.1 dB), a NF <3.6 dB over the entire band (with 2.4 dB min figure), an input third-order intercept point (IIP3) >3.3 dBm (7.6 dBm max.) and an input power reflection coefficient S11 <−16 dB. When optimized for best NF, it achieves a voltage gain >24.7 dB (power gain >19.8 dB), a NF <2 dB over the entire band, an IIP3 >−0.3 dBm and an S11 <−11 dB. Monte Carlo simulation results confirm low sensitivity to process variations. Also a low sensitivity to temperature within the range −55 to 125 °C was observed for Gain, NF and S11. Power consumption is 18 mW under a 1.2 V supply.