Technological experiments and mathematical modeling of the fluid dynamics and heat transfer in gallium arsenide single-crystal growth processes

被引：1
|
作者：
Zakharov V.G. [1 ]
Kosushkin V.G. [1 ]
Nikitin S.A. [1 ]
Polezhaev V.I. [1 ]
机构：
来源：
Fluid Dynamics | 1998年 / 33卷 / 1期
关键词：
GaAs; Heat Wave; Heater Temperature; Gallium Arsenide; Temperature Oscillation;
D O I：
10.1007/BF02698168
中图分类号：
学科分类号：
摘要：
Mathematical modeling is combined with technological experiments to study the flow and heat transfer processes of gallium arsenide (GaAs) single-crystal growth by the Czochralski method. When the heat wave produced by periodic variation of the heater temperature acts upon the molten material regions adjacent to the crystallization front. It is shown that such comparatively low-energy excitation makes it possible to reduce the striated inhomogeneity of single crystals caused by temperature oscillations near the crystal/melt interface.
引用
收藏
页码：110 / 116
页数：6
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