Nanomesh electrode on MgZnO-based metal-semiconductor-metal ultraviolet photodetectors

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作者
Ching-Ting Lee
Heng-Yu Lin
Chun-Yen Tseng
机构
[1] Institute of Microelectronics,Department of Electrical Engineering
[2] Research Center of Energy Technology and Strategy and Advanced Optoelectronic Technology Center,undefined
[3] National Cheng Kung University,undefined
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In this work, the nano-scaled mesh electrodes are fabricated by obliquely depositing metals through the highly ordered polystyrene nanosphere mask. Furthermore, the intrinsic MgZnO film is deposited as the absorption layer for the metal-semiconductor-metal ultraviolet photodetectors (MSM-UV-PDs) using the vapor cooling condensation system. The 100-nm-linewidth nanomesh electrodes with metal occupying a roughly 10% of the device surface region consequently render PDs with a high transmittance in the ultraviolet (UV) wavelength range. The photoresponsivity of MgZnO-based MSM-UV-PDs evaluated at the wavelength of 330 nm with the operating bias voltage of 5 V is elevated from 0.135 to 0.248 A/W when the thin metal electrode is replaced by the nanomesh electrode and the corresponding quantum efficiency is improved from 50.75 to 93.23%. Finally, adopting the nanomesh electrode also helps to enhance the UV-visible rejection ratio (R330nm/R450nm) and the detectivity from 1663 and 1.78 × 1010 cmHz0.5W−1 to 2480 and 2.43 × 1010 cmHz0.5W−1, respectively.
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