Development of transient voltage suppressor device with abrupt junctions embedded by epitaxial growth technology

被引：0
|
作者：
S. S. Choi
D. H. Cho
K. H. Shim
机构：
[1] Chonbuk National University,Semiconductor Physics Research Center, Department of Semiconductor Science and Technology
[2] SPRC,Sigetronics Inc., R&D Division
来源：
Electronic Materials Letters | 2009年 / 5卷
关键词：
Zener; TVS; ESD; HBM; epitaxy; avalanche; breakdown; LED;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A new Zener transient voltage suppressor (TVS) consisting of abrupt junctions of epitaxial layers has been developed. Differential resistance in the breakdown region is obtained as low as 5Ω, and the reverse leakage current is substantially suppressed by one to two orders of magnitude compared to a conventional Zener diode. The reliability of the TVS is confirmed based on its maximum allowed reverse current level and the robustness of its electrostatic discharge endurance against ±8 kV of the human body model (HBM) at a wide range of operating temperatures (30°C to 180°C). This significant improvement is primarily attributed to the abrupt junction profile formed by low-temperature processes, followed by epitaxial growth technology prohibiting redistribution of dopant elements.
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页码：59 / 62
页数：3
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