Design and Investigation of High Performance Magnesium Silicide Based Face Tunnel Field Effect Transistor

In this work, an advanced Face Tunnel Field Effect Transistor (FTFET) has been explored with magnesium silicide (Mg2Si) source on silicon device. In conventional TFET architectures, the tunneling junction is perpendicular to the gate and non-uniformly controlled whereas in FTFET architecture the gate is parallelly aligned with the tunneling junction and thus the complete tunneling junction can be controlled uniformly. The advantage of low bandgap Mg2Si source and its sharp discontinuities of energy band with the silicon channel has been utilized and presented for better tunneling interface. The conjunction of FTFET architecture and Mg2Si source results in manifold betterments in the drain current characteristics of the device. The device characterization has been done using the SILVACO ATLAS-2D TCAD device simulator. Result depicts superior performance in terms of DC characteristics i.e. higher drain current and high Ion/Ioff of 20.9 × 10–6 A/µm and 9.5 × 107 respectively at Vgs = 0.6 V with the threshold voltage of 0.37 V. The device also exhibits sub-60 mV of subthreshold swing with steeper transfer characteristics. Thus, the proposed TFET based architecture overcomes the limitations of conventional TFET architecture without degrading the other device parameters.