Magnetic coupling in ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices

被引：0
|
作者：
YuFei Cao
YanYong Li
YuanYuan Li
GuanNan Wei
Yang Ji
KaiYou Wang
机构：
[1] Chinese Academy of Sciences,The State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors
来源：
Science China Physics, Mechanics & Astronomy | 2014年 / 57卷
关键词：
magnetic coupling; magnetoresistance; bilayer structure; annealing; anisotropic field;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We carefully investigated the ferromagnetic coupling in the as-grown and annealed ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices. We observed that the magnetic interaction between the two layers strongly affects the magnetoresistance of the GaMnAs layer with applying the out of plane magnetic field. After low temperature annealing, the magnetic easy axis of the AlGaMnAs layer switches from out of plane into in-plane and the interlayer coupling efficiency is reduced from up to 0.6 to less than 0.4. However, the magnetic coupling penetration depth for the annealed device is twice that of the as-grown bilayer device.
引用
收藏
页码：1471 / 1475
页数：4
相关论文
共 50 条
  • [41] Observation of electric and magnetic properties in a diluted magnetic semiconductor GaMnAs/GaAs (111)
    Park, C. S.
    Choi, H. K.
    Yang, C. U.
    Park, Y. D.
    Son, J. Y.
    Shon, Yoon
    JOURNAL OF CRYSTAL GROWTH, 2011, 336 (01) : 20 - 23
  • [42] Doping effect on the properties of III-V ferromagnetic semiconductor GaMnAs epilayers and their superlattices
    Lee, S
    Chung, SJ
    Liu, X
    Furdyna, JK
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 47 (03) : 444 - 447
  • [43] Ultrafast optical observation of spin-pumping induced dynamic exchange coupling in ferromagnetic semiconductor/metal bilayer
    Liu, X.
    Liu, P.
    Yuan, H. C.
    Shi, J. Y.
    Wang, H. L.
    Nie, S. H.
    Jin, F.
    Zheng, Z.
    Yu, X. Z.
    Zhao, J. H.
    Zhao, H. B.
    Lupke, G.
    SCIENTIFIC REPORTS, 2022, 12 (01)
  • [44] Ultrafast optical observation of spin-pumping induced dynamic exchange coupling in ferromagnetic semiconductor/metal bilayer
    X. Liu
    P. Liu
    H. C. Yuan
    J. Y. Shi
    H. L. Wang
    S. H. Nie
    F. Jin
    Z. Zheng
    X. Z. Yu
    J. H. Zhao
    H. B. Zhao
    G. Lüpke
    Scientific Reports, 12
  • [45] Ultrafast Control of Interfacial Exchange Coupling in Ferromagnetic Bilayer
    Liu, Xiao
    Yuan, Haochen
    Liu, Peiwen
    Shi, Jingyu
    Wang, Hailong
    Nie, Shuaihua
    Jin, Feng
    Zheng, Zhe
    Yu, Xuezhe
    Zhao, Jianhua
    Zhao, Haibin
    Luepke, Gunter
    ADVANCED ELECTRONIC MATERIALS, 2023, 9 (04)
  • [46] Scattering modes of skyrmions in a bilayer system with ferromagnetic coupling
    Vojkovic, S.
    Cacilhas, R.
    Pereira, A. R.
    Altbir, D.
    Nunez, A. S.
    Carvalho-Santos, V. L.
    NANOTECHNOLOGY, 2021, 32 (17)
  • [47] Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy
    Chongthanaphisut, Phunvira
    Bac, Seul-Ki
    Choi, Seonghoon
    Lee, Kyung Jae
    Chang, Jihoon
    Choi, Suho
    Lee, Sanghoon
    Nnaji, Moses
    Liu, X.
    Dobrowolska, M.
    Furdyna, J. K.
    SCIENTIFIC REPORTS, 2019, 9 (1)
  • [48] Interlayer exchange coupling in ferromagnetic semiconductor trilayers with out-of-plane magnetic anisotropy
    Phunvira Chongthanaphisut
    Seul-Ki Bac
    Seonghoon Choi
    Kyung Jae Lee
    Jihoon Chang
    Suho Choi
    Sanghoon Lee
    Moses Nnaji
    X. Liu
    M. Dobrowolska
    J. K. Furdyna
    Scientific Reports, 9
  • [49] Gate control of interlayer exchange coupling in ferromagnetic semiconductor trilayers with perpendicular magnetic anisotropy
    Chongthanaphisut, Phunvira
    Lee, Kyung Jae
    Lee, Sanghoon
    Liu, X.
    Dobrowolska, M.
    Furdyna, J. K.
    APL MATERIALS, 2022, 10 (04):
  • [50] Snake orbits in hybrid semiconductor ferromagnetic devices
    Peeters, FM
    Reijniers, J
    Badalian, SM
    Vasilopoulos, P
    MICROELECTRONIC ENGINEERING, 1999, 47 (1-4) : 405 - 407
12345