Valley polarization assisted spin polarization in two dimensions

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作者
V. T. Renard
B. A. Piot
X. Waintal
G. Fleury
D. Cooper
Y. Niida
D. Tregurtha
A. Fujiwara
Y. Hirayama
K. Takashina
机构
[1] Université Grenoble Alpes/CEA,Department of Physics
[2] INAC-SPSMS,undefined
[3] Laboratoire National des Champs Magnétiques Intenses,undefined
[4] CNRS-UJF-UPS-INSA-EMFL,undefined
[5] Service de Physique de l’État Condensé,undefined
[6] DSM/IRAMIS/SPEC,undefined
[7] Université Grenoble Alpes/CEA Leti Minatec campus,undefined
[8] Graduate School of Science,undefined
[9] Tohoku University,undefined
[10] University of Bath,undefined
[11] NTT Basic Research Laboratories,undefined
[12] NTT Corporation,undefined
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摘要
Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two-dimensional systems, valley polarization can dramatically modify physical properties through electron–electron interactions as demonstrated by such phenomena as the fractional quantum Hall effect and the metal-insulator transition. Here, we address the electrons’ spin alignment in a magnetic field in silicon-on-insulator quantum wells under valley polarization. In stark contrast to expectations from a non-interacting model, we show experimentally that less magnetic field can be required to fully spin polarize a valley-polarized system than a valley-degenerate one. Furthermore, we show that these observations are quantitatively described by parameter-free ab initio quantum Monte Carlo simulations. We interpret the results as a manifestation of the greater stability of the spin- and valley-degenerate system against ferromagnetic instability and Wigner crystalization, which in turn suggests the existence of a new strongly correlated electron liquid at low electron densities.
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