Multilevel resistance state of Cu/La2O3/Pt forming-free switching devices

被引：0

作者：

Pranab Kumar Sarkar

Manoj Prajapat

Arabinda Barman

Snigdha Bhattacharjee

Asim Roy

机构：

[1] National Institute of Technology,Micro and Nano Research Lab, Department of Physics

[2] Indian Institute of Science Education and Research (IISER) Bhopal,Department of Physics

[3] Shiv Nadar University,Department of Physics, School of Natural Sciences

来源：

Journal of Materials Science | 2016年 / 51卷

关键词：

La2O3; Memory Device; Resistive Switching; Conducting Filament; High Resistance State;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

An improved temperature dependent uniformity and reliability is investigated in La2O3/Pt-based memory devices with Cu top electrode. The microstructural investigation suggested the formation of polycrystalline La2O3 layer with stoichiometric chemical composition confirmed by X-ray photoelectron spectroscopy. Besides showing a forming-free resistive switching (RS) behaviour, the device also exhibited excellent multilevel capability with low switching voltage. A uniformity in the SET/RESET process was observed indicating enhanced switching stability. In addition, endurance with a high ON/OFF ratio of the order 103 and satisfactory data retention time over 104 s at 85 °C temperature confirmed the reliability of memory cells. Intrinsic tailoring of switching mechanism has been discussed in the framework of electric field-induced creation and annihilation of the reproducible Cu filaments in switching layer. The metallic nature of conducting filament has further been confirmed by temperature-dependent RS characterization.

引用

页码：4411 / 4418

页数：7

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