La2/3Ca1/3MnO3 films were prepared using a conventional paint-on method on alumina and monocrystalline TiSrO3 substrates. A significant difference between the peak resistivity temperature Tp=178 K and the magnetic transition temperature Tc=240 K was found in contrast to single crystal samples. The behavior of the magnetoresistance with temperature also differs from that found in bulk samples. Although the films show significant granular morphology differences, their transport and magnetoresistive properties are very similar. Maximum magnetoresistance ratios of 16% and 10% at 0.3 T and 77 K were obtained for films deposited on alumina and TiSrO3 substrates, respectively. Magnetization measurements above Tc show a nonlinear behavior, consistent with the presence of ferromagnetic inhomogeneities within the paramagnetic phase. These results suggest that, in addition to the importance of grain boundary scattering in determining the magnetoresistance at low fields, microscopic inhomogeneity plays a role in determining magnetotransport properties.
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Nanyang Technol Univ, Sch Mat Engn, Adv Mat Res Ctr, Singapore 639798, SingaporeNanyang Technol Univ, Sch Mat Engn, Adv Mat Res Ctr, Singapore 639798, Singapore
Zhang, YB
Li, S
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Nanyang Technol Univ, Sch Mat Engn, Adv Mat Res Ctr, Singapore 639798, SingaporeNanyang Technol Univ, Sch Mat Engn, Adv Mat Res Ctr, Singapore 639798, Singapore
Li, S
Sun, CQ
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Nanyang Technol Univ, Sch Mat Engn, Adv Mat Res Ctr, Singapore 639798, SingaporeNanyang Technol Univ, Sch Mat Engn, Adv Mat Res Ctr, Singapore 639798, Singapore
Sun, CQ
Widjaja, S
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Nanyang Technol Univ, Sch Mat Engn, Adv Mat Res Ctr, Singapore 639798, SingaporeNanyang Technol Univ, Sch Mat Engn, Adv Mat Res Ctr, Singapore 639798, Singapore
Widjaja, S
Hing, P
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Nanyang Technol Univ, Sch Mat Engn, Adv Mat Res Ctr, Singapore 639798, SingaporeNanyang Technol Univ, Sch Mat Engn, Adv Mat Res Ctr, Singapore 639798, Singapore
机构:
Univ Santiago de Compostela, Fac Fis, Dept Fis Aplicada, Santiago De Compostela 15782, SpainUniv Santiago de Compostela, Fac Fis, Dept Fis Aplicada, Santiago De Compostela 15782, Spain
Hueso, LE
Sande, P
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机构:Univ Santiago de Compostela, Fac Fis, Dept Fis Aplicada, Santiago De Compostela 15782, Spain
Sande, P
Rivadulla, F
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机构:Univ Santiago de Compostela, Fac Fis, Dept Fis Aplicada, Santiago De Compostela 15782, Spain
Rivadulla, F
Fondado, A
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Fondado, A
Rivas, J
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Rivas, J
López-Quintela, MA
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机构:Univ Santiago de Compostela, Fac Fis, Dept Fis Aplicada, Santiago De Compostela 15782, Spain