Near field scanning optical spectroscopy of InP single quantum dots

被引：0
|
作者：
G. Guttroff
M. Bayer
A. Forchel
D. V. Kazantsev
M. K. Zundel
K. Eberl
机构：
[1] Universität Würzburg Am Hubland,Technische Physik
[2] Russian Academy of Sciences,Institute of Theoretical and Experimental Physics
[3] Max-Planck-Institut für Festkörperforschung,undefined
来源：
Journal of Experimental and Theoretical Physics Letters | 1997年 / 66卷
关键词：
73.61.Ey; 73.20.Dx; 07.79.Fc; 61.16.Ch;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We study InP quantum dots which are prepared by strain induced self-assembly on GaAs substrates with a GaInP buffer layer using a near field scanning optical microscope operating at near liquid He bath temperatures in the collection mode. Single quantum dots are identified spatially and spectrally due to their photoluminescence spectrum. Series of luminescence lines due to single dots of different sizes are discussed in terms of dot height and width fluctuations.
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页码：528 / 533
页数：5
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