Near field scanning optical spectroscopy of InP single quantum dots

被引：0
|
作者：
G. Guttroff
M. Bayer
A. Forchel
D. V. Kazantsev
M. K. Zundel
K. Eberl
机构：
[1] Universität Würzburg Am Hubland,Technische Physik
[2] Russian Academy of Sciences,Institute of Theoretical and Experimental Physics
[3] Max-Planck-Institut für Festkörperforschung,undefined
来源：
Journal of Experimental and Theoretical Physics Letters | 1997年 / 66卷
关键词：
73.61.Ey; 73.20.Dx; 07.79.Fc; 61.16.Ch;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We study InP quantum dots which are prepared by strain induced self-assembly on GaAs substrates with a GaInP buffer layer using a near field scanning optical microscope operating at near liquid He bath temperatures in the collection mode. Single quantum dots are identified spatially and spectrally due to their photoluminescence spectrum. Series of luminescence lines due to single dots of different sizes are discussed in terms of dot height and width fluctuations.
引用
收藏
页码：528 / 533
页数：5
相关论文
共 50 条
  • [1] Near field scanning optical spectroscopy of InP single quantum dots
    Guttroff, G
    Bayer, M
    Forchel, A
    Kazantsev, DV
    Zundel, MK
    Eberl, K
    JETP LETTERS, 1997, 66 (07) : 528 - 533
  • [2] Investigation of electronic structure of InP single quantum dots using near field scanning optical spectroscopy
    Guttroff, G
    Bayer, M
    Forchel, A
    Kazantsev, DV
    Zundel, MK
    Eberl, K
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1997, 164 (01): : 291 - 296
  • [3] Near-field optical spectroscopy of excitons in single quantum dots
    Saiki, T
    Nishi, K
    FAR- AND NEAR-FIELD OPTICS: PHYSICS AND INFORMATION PROCESSING, 1998, 3467 : 212 - 221
  • [4] Near field optical spectroscopy on single InGaAs/GaAs quantum dots.
    Lomascolo, M
    Cannoletta, D
    Rinaldi, R
    Passaseo, A
    Cingolani, R
    Patanè, S
    Saitta, G
    Labardi, M
    Allegrini, M
    PROCEEDINGS OF THE 5TH MULTINATIONAL CONGRESS ON ELECTRON MICROSCOPY, 2001, : 351 - 352
  • [5] Near-field optical spectroscopy and imaging of single InGaAs/AlGaAs quantum dots
    Chavez-Pirson, A
    Temmyo, J
    Kamada, H
    Gotoh, H
    Ando, H
    APPLIED PHYSICS LETTERS, 1998, 72 (26) : 3494 - 3496
  • [6] Electron microscopy and optical spectroscopy of single InAs/InP quantum dots
    Chithrani, D.
    Perovic, D. D.
    Williams, R. L.
    Lefebvre, J.
    Poole, P. J.
    Aers, G. C.
    Microscopy of Semiconducting Materials, 2005, 107 : 247 - 250
  • [7] Near field optical spectroscopy of GaN/AIN quantum dots
    Neogi, A
    Gorman, BP
    Morkoç, H
    Kawazoe, T
    Ohtsu, M
    Kuball, M
    GAN, AIN, INN AND THEIR ALLOYS, 2005, 831 : 317 - 322
  • [8] Femtosecond near-field spectroscopy of single quantum dots
    Lienau, C
    Guenther, T
    Unold, T
    Mueller, K
    Elsaesser, T
    ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS VIII, 2004, 5352 : 16 - 31
  • [9] Near-field optical spectroscopy of selfassembled quantum dots: NSOM apparatus for measuring the features of single dots
    Toda, Y
    Shinomori, S
    Suzuki, K
    Arakawa, Y
    SOLID-STATE ELECTRONICS, 1998, 42 (7-8) : 1083 - 1086
  • [10] Optical spectroscopy of single InAs/InP quantum dots around λ=1.55 μm
    Chithrani, D
    Williams, RL
    Lefebvre, J
    Poole, PJ
    Aers, GC
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4): : 290 - 294
12345