Circular polarization in a non-magnetic resonant tunneling device

被引：0

作者：

Lara F dos Santos

Yara Galvão Gobato

Márcio D Teodoro

Victor Lopez-Richard

Gilmar E Marques

Maria JSP Brasil

Milan Orlita

Jan Kunc

Duncan K Maude

Mohamed Henini

Robert J Airey

机构：

[1] Federal University of São Carlos,Physics Department

[2] Physics Institute,School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Centre

[3] UNICAMP,EPSRC National Centre for III

[4] Grenoble High Magnet Field Laboratory,V Technologies

[5] University of Nottingham,Institute of Physics

[6] The University of Sheffield,undefined

[7] Charles University,undefined

来源：

Nanoscale Research Letters | / 6卷

关键词：

Quantum Well; Spin Polarization; Circular Polarization; Voltage Dependence; Contact Layer;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects.

引用

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