Junction parameters and characterization of Au/n-Ge15In5Se80/p-Si/Al heterojunction

被引：0
|
作者：
M. M. El-Nahass
M. H. Ali
E. A. A. El-Shazly
I. T. Zedan
机构：
[1] Ain Shams University,Physics Department, Faculty of Education
[2] Ain Shams University,Physics Department, Faculty of Science
[3] High Institute of Engineering and Technology,Basic Science Department
来源：
Applied Physics A | 2016年 / 122卷
关键词：
Series Resistance; Ideality Factor; Rectification Ratio; Valence Band Edge; Space Charge Limited Current;
D O I：
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中图分类号：
学科分类号：
摘要：
The analysis of the electrical properties of Au/n-Ge15In5Se80/p-Si/Al heterojunction is examined. I–V characteristics show diode-like behavior. The series resistance is found to decrease with increasing the temperature in three different methods of calculations. The thermionic emission mechanism is found to be the operating mechanism at relatively low forward voltages (V < 0.25). While, at relatively high forward voltage, the space charge limited conduction is the operating mechanism. The rectification ratio, ideality factor, barrier height, total trap concentration and built-in voltage are determined. The capacitance–voltage (C–V) characteristics of Au/n-Ge15In5Se80/p-Si/Al heterojunction are also investigated. The I–V curve of the Au/n-Ge15In5Se80/p-Si/Al heterojunction in the dark and after illumination is clarified.
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