Numerical analysis of high-efficiency lead-free perovskite solar cell with NiO as hole transport material and PCBM as electron transport material

被引：18
|
作者：
T. R. Lenka
A. C. Soibam
K. Dey
T. Maung
F. Lin
机构：
[1] National Institute of Technology Silchar,Microelectronics and VLSI Design Group, Department of Electronics and Communication Engineering
[2] University of Cambridge,Cavendish Laboratory, Department of Physics
[3] National University of Singapore,Solar Energy Research Institute of Singapore
[4] National University of Singapore,Department of Electrical and Computer Engineering
来源：
CSI Transactions on ICT | 2020年 / 8卷 / 2期
关键词：
Lead free perovskite; NiO; PCBM; Solar cell; SCAPS;
D O I：
10.1007/s40012-020-00291-7
中图分类号：
学科分类号：
摘要：
In this work a lead free perovskite solar cell structure is proposed with NiO as the hole transport material (HTM), CH3NH3SnI3 as the perovskite absorber material and PCBM (phenyl C61 butyric acid methyl ester) as the electron transport material (ETM). Numerical analysis of the designed solar cell is performed using Solar Cell Capacitance Simulator (SCAPS-1D) program. The power conversion efficiency (PCE) of the optimized device stack is found to be above 29% with Voc = 0.98 V, Jsc = 34.86 mA/cm2, FF = 85.64%. The lead free perovskite solar cell with different HTM and ETM may be investigated for high PCE.
引用
收藏
页码：111 / 116
页数：5
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