Crystallization ability and optical and electrical properties of Ge10(Se-Te)90 and Ge30(Se-Te)70 chalcogenide glassy semiconductors

Chalcogenide glassy semiconductors of the ternary system Ge-Se-Te along the Ge10(Se-Te)90 and Ge30(Se-Te)70 joins have been synthesized. The crystallization ability, near-IR transmission spectra, and temperature dependence of the electrical conductivity of the alloys obtained have been studied. It is shown that chalcogenide glassy semiconductors along the Ge10(Se-Te)90 join have a lower softening and crystallization points compared with semiconductors belonging to the Ge30(Se-Te)70 join. A change in the electrical conductivity of samples by several orders of magnitude occurs upon a phase transition from the glassy to the crystalline state. Compositions of chalcogenide glassy semiconductors in the Ge-Se-Te system are found, which have α < 1 cm−1 absorption coefficient at wavelengths of λ ≈ 1.5 μm and exhibit a thermally induced phase transition from the glassy to the crystalline state.