Growth of high-homogeneity GaSb:Te crystals for thermophotovoltaic energy converters

被引：3
|
作者：
Serebryakov Y.A. [1 ]
Sidorov V.S. [1 ]
Prokhorov I.A. [1 ]
Korobeinikova E.N. [1 ]
Vlasov V.N. [1 ]
Artem'ev V.K. [2 ]
Folomeev V.I. [2 ]
Shul'pina I.L. [3 ]
Pakhanov N.A. [4 ]
机构：
[1] Research Center for Space-Materials Science, Shubnikov Institute of Crystallography, Russian Academy of Sciences, Kaluga
[2] State Scientific Center of the Russian Federation Leypunsky Inst. for Physics and Power Engineering, Obninsk, Kaluga oblast
[3] Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg
[4] Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk
来源：
Journal of Surface Investigation | 2014年 / 8卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
Gallium compounds - Mass transfer - III-V semiconductors;
D O I：
10.1134/S1027451014040144
中图分类号：
学科分类号：
摘要：
Problems concerning the technology of growing highly homogeneous semiconductor crystals are discussed. The dependence between the inhomogeneity of GaSb:Te substrates and the efficiency of thermophotovoltaic converters (TPVCs) fabricated on their base via the diffusion technique is examined. The macro- and microhomogeneities of grown crystals can be substantially increased on account of the theoretically substantiated and experimentally implemented approximation to diffusive mass transfer conditions in the melt. The characteristics of TPVCs on substrates made of crystals with the most homogeneous properties exceed the analogous characteristics of other samples. © 2014 Pleiades Publishing, Ltd.
引用
收藏
页码：666 / 674
页数：8
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