LEC GROWTH OF TE-DOPED GASB SINGLE-CRYSTALS WITH UNIFORM CARRIER CONCENTRATION DISTRIBUTION

被引:28
|
作者
OHMORI, Y [1 ]
SUGII, K [1 ]
AKAI, S [1 ]
MATSUMOTO, K [1 ]
机构
[1] SUMITOM ELECT IND LTD,DEPT SEMICOND,ITAMI,HYOGO 664,JAPAN
关键词
D O I
10.1016/0022-0248(82)90174-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:79 / 85
页数:7
相关论文
共 50 条
  • [1] CZOCHRALSKI GROWTH OF TE-DOPED GASB SINGLE-CRYSTALS
    STEPANEK, B
    SESTAKOVA, V
    SESTAK, J
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 20 (03): : 249 - 255
  • [2] STUDY OF LOW TE-DOPED GASB SINGLE-CRYSTALS
    STEPANEK, B
    SOUREK, Z
    SESTAKOVA, V
    SESTAK, J
    KUB, J
    JOURNAL OF CRYSTAL GROWTH, 1994, 135 (1-2) : 290 - 296
  • [3] CZOCHRALSKI GROWN CONCENTRATION PROFILES IN THE UNDOPED AND TE-DOPED GASB SINGLE-CRYSTALS
    STEPANEK, B
    SESTAKOV, V
    THERMOCHIMICA ACTA, 1992, 209 : 285 - 294
  • [4] GROWTH OF TE-DOPED INBI SINGLE-CRYSTALS BY SYRINGE PULLING
    PANDYA, GR
    JANI, TM
    DESAI, CF
    CRYSTAL RESEARCH AND TECHNOLOGY, 1993, 28 (06) : K57 - K58
  • [5] Optical and structural characterization of GaSb and Te-doped GaSb single crystals
    Tirado-Mejia, L.
    Villada, J. A.
    de los Rios, M.
    Penafiel, J. A.
    Fonthal, G.
    Espinosa-Arbelaez, D. G.
    Ariza-Calderon, H.
    Rodriguez-Garcia, M. E.
    PHYSICA B-CONDENSED MATTER, 2008, 403 (21-22) : 4027 - 4032
  • [6] STUDY OF DISLOCATION DENSITY IN TE-DOPED GASB SINGLE-CRYSTALS GROWN BY MEANS OF CZOCHRALSKI TECHNIQUE
    SESTAKOVA, V
    STEPANEK, B
    THERMOCHIMICA ACTA, 1992, 209 : 277 - 284
  • [7] LEC GROWTH OF GASB SINGLE-CRYSTALS USING BORIC OXIDE
    KATSUI, A
    UEMURA, C
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) : L318 - L320
  • [8] CHEMICAL MODIFICATION AND CHARACTERIZATION OF TE-DOPED NORMAL-GASB (111) SINGLE-CRYSTALS FOR DEVICE APPLICATION
    BASU, S
    BARMAN, P
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (03): : 1078 - 1080
  • [9] CHARACTERIZATION OF EXTENDED DEFECTS IN HIGHLY TE-DOPED (111) GASB SINGLE-CRYSTALS GROWN BY THE CZOCHRALSKI TECHNIQUE
    DOERSCHEL, J
    GEISSLER, U
    JOURNAL OF CRYSTAL GROWTH, 1992, 121 (04) : 781 - 789
  • [10] Luminescence from indented Te-doped GaSb crystals
    Chioncel, MF
    Díaz-Guerra, C
    Piqueras, J
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (03) : 490 - 493