Minority carrier lifetimes in polycrystalline silicon treated with liquid metals

被引：0
|
作者：
B. Sapaev
机构：
[1] Academy of Sciences of the Republic of Uzbekistan,Physicotechnical Institute, “Solar Physics” Research and Production Corporation
来源：
Technical Physics Letters | 2003年 / 29卷
关键词：
Silicon; Experimental Data; Liquid Metal; Twofold Increase; Minority Carrier;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effect of treatment at 800°C in various liquid metal solvents (Sn, Bi, Pb) on the minority carrier lifetime τ in polycrystalline silicon has been studied. The results of dc photoconductivity measurements show evidence of the external gettering effect, the best gettering being observed when tin was used as the solvent. A 2-h treatment leads to a twofold increase in the τ value. The experimental data indicate that the external gettering effect can be used in practice.
引用
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页码：865 / 866
页数：1
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