Fabrication and Simulation of an Indium Gallium Arsenide Quantum-Dot-Gate Field-Effect Transistor (QDG-FET) with ZnMgS as a Tunnel Gate Insulator

被引：0

作者：

P.-Y. Chan

M. Gogna

E. Suarez

F. Al-Amoody

S. Karmakar

B. I. Miller

E. K. Heller

J. E. Ayers

F. C. Jain

机构：

[1] University of Connecticut,Department of Electrical and Computer Engineering

[2] Global Foundries,undefined

[3] Inc.,undefined

[4] Intel Corporation,undefined

[5] Synopsys,undefined

[6] Inc.,undefined

来源：

Journal of Electronic Materials | 2013年 / 42卷

关键词：

InGaAs MOSFET; high ; ZnMgS gate dielectric; II–VI insulator; quantum dot gate; multistate behavior;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

An indium gallium arsenide quantum-dot-gate field-effect transistor using Zn0.95Mg0.05S as the gate insulator is presented in this paper, showing three output states which can be used in multibit logic applications. The spatial wavefunction switching effect in this transistor has been investigated, and modeling simulations have shown supporting evidence that additional output states can be achieved in one transistor.

引用

页码：3259 / 3266

页数：7

共 38 条

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