Features of charge formation and relaxation in SOS structures under the effect of ionizing radiation

被引：3
|
作者：
Sogoyan A.V. [1 ,2 ]
Davydov G.G. [1 ,2 ]
机构：
[1] National Research Nuclear University MEPhI, Moscow 125080
[2] OAO ENPO Specialized Electronic Systems, Moscow 115409
来源：
Russian Microelectronics | 2011年 / 40卷 / 03期
关键词：
Leakage Current; Supply Voltage; Sapphire Substrate; RUSSIAN Microelectronics; Current Consumption;
D O I：
10.1134/S1063739711030085
中图分类号：
学科分类号：
摘要：
Features of charge formation in SOS structures under irradiation are investigated experimentally. A model that makes it possible to describe the dependence that the kinetics of charge accumulation and relaxation in the Si-Al2O3 system has on the field strength, temperature, intensity, and type of ionizing radiation is suggested. The influence of the two-dimensional character of processes on the charge formation in the SOS MOS devices is investigated. © 2011 Pleiades Publishing, Ltd.
引用
收藏
页码：194 / 208
页数：14
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