共 50 条
- [21] Segregation behavior during silicon single-crystal growth from the melt Journal of Applied Physics, 1995, 78 (03):
- [22] INSITU OBSERVATION OF THE DYNAMICS OF THE GROWTH-STAGES DURING CRYSTAL-GROWTH FROM THE MELT HELVETICA PHYSICA ACTA, 1984, 57 (02): : 241 - 241
- [23] ELECTRON-ENERGY DISTRIBUTION DURING AUTOEMISSION FROM TANTALUM,, MOLYBDENUM AND TUNGSTEN CARBIDE, COVERED BY SILICON AND ALUMINUM OXIDES IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1974, 38 (02): : 338 - 344
- [26] Crucible-semiconductor interactions during crystal growth from the melt-in space Adv Space Res, 7 (200):
- [27] CRUCIBLE SEMICONDUCTOR INTERACTIONS DURING CRYSTAL-GROWTH FROM THE MELT IN-SPACE MICROGRAVITY SCIENCES: RESULTS AND ANALYSIS OF RECENT SPACEFLIGHTS, 1995, 16 (07): : 199 - 203
- [28] FLOW CONTROL USING ALTERNATING MAGNETIC FIELDS DURING CRYSTAL GROWTH FROM A MELT PROCEEDINGS OF THE ASME INTERNATIONAL MECHANICAL ENGINEERING CONGRESS AND EXPOSITION - 2012, VOL 7, PTS A-D, 2013, : 35 - 44
- [29] SOME PECULIARITIES IN THE FORMATION OF GASEOUS INCLUSIONS DURING THE CRYSTAL-GROWTH FROM MELT KRISTALLOGRAFIYA, 1982, 27 (03): : 551 - 555
- [30] The distribution of autelectronic emission from single crystal metal points II. The adsorption, migration and evaporation of thorium, barium and sodium on tungsten and molybdenum PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1942, 180 (A981) : 0225 - 0235