Tight-binding simulation of silicon and germanium nanocrystals

被引：0
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作者：
A. V. Gert
M. O. Nestoklon
A. A. Prokofiev
I. N. Yassievich
机构：
[1] Russian Academy of Sciences,Ioffe Institute
来源：
Semiconductors | 2017年 / 51卷
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摘要：
This review is devoted to the modeling of Si and Ge nanocrystals by means of the tight-binding method. First we give the short outline of the modeling methods and their application for the discription of silicon and germanium nanocrystals. Then, the tight-binding method with extended s, p, d, and s* basis is explained in details and the results obtained with the use of this method are presented.
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页码：1274 / 1289
页数：15
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