Investigation of Built-in Electric Fields at the GaSe/GaAs Interface by Photoreflectance Spectroscopy

被引：0
|
作者：
O. S. Komkov
S. A. Khakhulin
D. D. Firsov
P. S. Avdienko
I. V. Sedova
S. V. Sorokin
机构：
[1] St. Petersburg Electrotechnical University “LETI”,
[2] Ioffe Institute,undefined
来源：
Semiconductors | 2020年 / 54卷
关键词：
GaSe; layered semiconductors; modulation optical spectroscopy; molecular-beam epitaxy; photoreflectance;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
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页码：1198 / 1204
页数：6
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