Electrical property investigation of the Au/n-Si and Au/PVA+benzimidazole Co complex/n-Si diodes under ultraviolet illumination

被引:0
|
作者
Muharrem Gökçen
Songül Taran
Ersin Orhan
机构
[1] Düzce University,Department of Physics, Faculty of Arts and Sciences
[2] Düzce University,Department of Chemistry, Faculty of Arts and Sciences
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Polyvinyl alcohol (PVA) was doped using the di[1-(2-ethoxyethyl)-5-nitrobenzimidazole] cobalt dichloride and this polymeric composite was used as an interface in Au/n-Si diodes. The basic electrical properties of these fabricated Au/n-Si (MS) and Au/PVA+Co complex/n-Si (MPS) diodes were examined measuring voltage-dependent current (I(V)) data in various ultraviolet illumination intensities and room temperature. Electrical parameters of the MS and MPS diodes were calculated by thermionic emission, Norde, and Card & Rhoderick method. It was found that the ideality factor (n) values of the MS diode increased from 6.7 to 13.4 while the MPS ones increased from 3.4 to 7.5 with increasing illumination. Also, the photo-responsivity (PR) of MPS diode was obtained for P = 50 mW/cm2 (365 nm UV) as 0.29 A/W at − 5.00 V and 4.01 mA/W at 0 V.
引用
收藏
页码:6323 / 6330
页数:7
相关论文
共 50 条
  • [41] Negative Dielectric Constant and Electrical Conductivity of Au/n-Si (111) Schottky Barrier Diodes with PVA/Ni,Zn Interfacial Layer
    Tunc, T.
    Dokme, I.
    Altindal, S.
    Uslu, I.
    JOURNAL OF APPLIED POLYMER SCIENCE, 2011, 122 (01) : 265 - 272
  • [42] Illumination Dependent Admittance Characteristics of Au/Zinc Acetate Doped Polyvinyl Alcohol (PVA:Zn)/n-Si Schottky Barrier Diodes (SBDs)
    Tascioglu, I.
    Aydemir, U.
    Altindal, S.
    Tunc, T.
    INTERNATIONAL CONGRESS ON ADVANCES IN APPLIED PHYSICS AND MATERIALS SCIENCE, 2011, 1400 : 307 - 311
  • [43] Controlling the electrical characteristics of Au/n-Si structures by interfacial insulator layer
    Yildirim, M.
    Gokcen, M.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2012, 15 (04) : 406 - 411
  • [44] The Richardson constant and barrier inhomogeneity at Au/Si3N4/n-Si (MIS) Schottky diodes
    Tataroglu, A.
    Pur, F. Z.
    PHYSICA SCRIPTA, 2013, 88 (01)
  • [45] Electrical parameters of Au/(%1Ni-PVA)/n-Si (MPS) structure: Surface states and their lifetimes
    Cetinkaya, H. G.
    Demirezen, S.
    Yeriskin, S. Altindal
    PHYSICA B-CONDENSED MATTER, 2021, 621
  • [46] Electrical parameters of Au/(%1Ni-PVA)/n-Si (MPS) structure: Surface states and their lifetimes
    Çetinkaya, H.G.
    Demirezen, S.
    Altındal Yerişkin, S.
    Physica B: Condensed Matter, 2021, 621
  • [47] Investigation of photo-induced effect on electrical properties of Au/PPy/n-Si (MPS) type schottky barrier diodes
    Ersoz, Gulcin
    Yucedag, Ibrahim
    Bayrakdar, Sumeyye
    Altindal, Semsettin
    Gumus, Ahmet
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2017, 28 (09) : 6413 - 6420
  • [48] Magnetoresistance effect of Co/AlOx/NiFe/Au/n-Si diode structure
    Fujiwara, Y
    Hirose, T
    Jim, M
    Kobayashi, T
    Masuda, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (8B): : L1009 - L1011
  • [49] The Effects of Illumination on Electrical Parameters of Au/P3HT/n-Si Schottky Barrier Diode
    Yukselturk, Esra
    Bulbul, Mahir
    Zeyrek, Sedat
    9TH INTERNATIONAL PHYSICS CONFERENCE OF THE BALKAN PHYSICAL UNION (BPU-9), 2016, 1722
  • [50] Investigation of photo-induced effect on electrical properties of Au/PPy/n-Si (MPS) type schottky barrier diodes
    Gülçin Ersöz
    İbrahim Yücedağ
    Sümeyye Bayrakdar
    Şemsettin Altındal
    Ahmet Gümüş
    Journal of Materials Science: Materials in Electronics, 2017, 28 : 6413 - 6420