Magnetotransport study on as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs strained quantum well structures

被引：0
|
作者：
Ömer Dönmez
Fahrettin Sarcan
Ayse Erol
Mustafa Gunes
Mehmet Çetin Arikan
Janne Puustinen
Mircea Guina
机构：
[1] Istanbul University,Department of Physics, Faculty of Science
[2] Adana Science and Technology University,Material Engineering
[3] Seyhan,Optoelectronics Research Centre
[4] Tampere University of Technology,undefined
[5] Korkeakoulunkatu,undefined
来源：
Nanoscale Research Letters | / 9卷
关键词：
GaInNAs; Magnetotransport; Shubnikov de Haas; Transport; Nitrogen-dependent effective mass;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] OPTICAL STUDY OF AN N-TYPE MODULATION-DOPED GAAS/ALAS MULTIPLE-QUANTUM-WELL STRUCTURE
    SCHMIEDEL, T
    FU, LP
    LEE, ST
    YU, WY
    PETROU, A
    DUTTA, M
    PAMULAPATI, J
    NEWMAN, PG
    BOVIATSIS, J
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (03) : 2100 - 2102
  • [32] N-type modulation-doped strained InGaAs/AlGaAs quantum well lasers grown by metal organic chemical vapor deposition
    Tokyo Inst of Technology, Yokohama, Japan
    Conf Quant Electron Laser Sci QELS Tech Dig Ser, (184-185):
  • [33] N-type modulation-doped strained InGaAs/AlGaAs quantum well lasers grown by metal organic chemical vapor deposition
    Hatori, N.
    Mukaihara, T.
    Ohnoki, N.
    Mizutani, A.
    Koyama, F.
    Iga, K.
    Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, 1996, : 386 - 387
  • [34] Electrical properties of n- and p-type doped epitaxial GaAs layers grown by OMVPE
    Modak, P
    Hudait, MK
    Hardikar, S
    Krupanidhi, SB
    PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 336 - 340
  • [35] MAGNETO-OPTICS OF N-TYPE AND P-TYPE MODULATION-DOPED GAAS/ALXGA1-XAS QUANTUM WELLS
    LEE, JS
    MIURA, N
    IWASA, Y
    SURFACE SCIENCE, 1988, 196 (1-3) : 534 - 539
  • [36] MAGNETOTRANSPORT AND LUMINESCENCE MEASUREMENTS IN AN N-TYPE SELECTIVELY DOPED INGAAS/GAAS STRAINED QUANTUM-WELL STRUCTURE
    FRITZ, IJ
    SCHIRBER, JE
    JONES, ED
    DRUMMOND, TJ
    DAWSON, LR
    APPLIED PHYSICS LETTERS, 1987, 50 (19) : 1370 - 1372
  • [37] Temperature studies of photoluminescence in modulation-doped AlGaAs/GaAs quantum-well structures
    Yaremenko, NG
    Galiev, GB
    Karachevtseva, MV
    Mokerov, VG
    Strakhov, VA
    JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2005, 50 (09) : 1097 - 1101
  • [38] Electrical properties of highly strained modulation-doped InAs/GaAs(110) quantum-well heterostructures
    Jaszek, R
    Harris, JJ
    Roberts, C
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (02) : 959 - 968
  • [39] Parallel dispersion in p-type modulation-doped quantum wells of intermediate thickness
    Ekenberg U., 1600, (05):
  • [40] PARALLEL DISPERSION IN P-TYPE MODULATION-DOPED QUANTUM WELLS OF INTERMEDIATE THICKNESS
    EKENBERG, U
    SUPERLATTICES AND MICROSTRUCTURES, 1989, 5 (03) : 351 - 354
12345